G11C 2211/561 Multilevel memory cell aspects
Full Title
Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor > Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups > Multilevel memory cell aspects
Filing statistics
CPC G11C 2211/561 belongs to the parent subclass G11C, which recorded 152,594 patent applications worldwide between 2013 and 2023. Annual filings grew from 10,826 in 2013 to 13,151 in 2023 (+21%), peaking at 17,166 applications in 2021. The most active applicants in class G11 are MICRON TECHNOLOGY (12,397 applications), SAMSUNG ELECTRONICS COMPANY (12,238 applications) and SK HYNIX (11,371 applications).
Source: EPO PATSTAT, worldwide filings
7 direct subcodes
Child Classifications
Navigate with arrow keys, Enter to open
- G11C 2211/5611 Multilevel memory cell with more than one control gate
- G11C 2211/5612 Multilevel memory cell with more than one floating gate
- G11C 2211/5613 Multilevel memory cell with additional gates, not being floating or control gates
- G11C 2211/5614 Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements
- G11C 2211/5615 Multilevel magnetic memory cell using non-magnetic non-conducting interlayer, e.g. MTJ
- G11C 2211/5616 Multilevel magnetic memory cell using non-magnetic conducting interlayer, e.g. GMR, SV, PSV
- G11C 2211/5617 Multilevel ROM cell programmed by source, drain or gate contacting
Top Applicants
Top 10 applicants by patent filingsfor class G11, 2013–2023, worldwide · Source: EPO PATSTAT
- MICRON TECHNOLOGY US 12,397
- SAMSUNG ELECTRONICS COMPANY KR 12,238
- SK HYNIX KR 11,371
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 4,601
- INTEL CORPORATION US 3,874
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 3,866
- SANDISK TECHNOLOGIES US 3,151
- SK HYNIX 3,143
- SAMSUNG ELECTRONICS COMPANY 3,073
- WESTERN DIGITAL TECHNOLOGIES US 2,961