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PCE
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DIFF Subgroup
H01S 5/343

in AIIIBV compounds, e.g. AlGaAs-laser

Introduced: January 2000

Title

Titles differ between systems:

IPC: in AB compounds, e.g. AlGaAs-laser

CPC: in AIIIBV compounds, e.g. AlGaAs-laser

Full Title

Full titles differ between systems:

IPC:

Semiconductor lasers > Structure or shape of the active region; Materials used for the active region > comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers > in AB compounds, e.g. AlGaAs-laser

CPC:

Semiconductor lasers (superluminescent diodes H10H20/00) > Structure or shape of the active region; Materials used for the active region > comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers (H01S5/36 takes precedence) > in AIIIBV compounds, e.g. AlGaAs-laser

Of 6 combined children, 0 exist in both systems.

6 codes are CPC-only extensions.

Child Classifications

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