IPC Subgroup
H01S 5/32 comprising PN junctions, e.g. hetero- or double- hetero-structures
Introduced: January 2000
Last revised: January 2006
Full Title
Semiconductor lasers > Structure or shape of the active region; Materials used for the active region > comprising PN junctions, e.g. hetero- or double- hetero-structures
Classification Context
- Section:
- ELECTRICITY
- Class:
- ELECTRIC ELEMENTS
- Subclass:
- DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2 direct subcodes
Child Classifications
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- H01S 5/323 in AB compounds, e.g. AlGaAs-laser
- H01S 5/327 in AB compounds, e.g. ZnCdSe-laser