H10F INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
Introduced: January 2025
Classification Context
- Section:
- ELECTRICITY
- Class:
- SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- Subclass:
- INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
Description
H10F encompasses inorganic semiconductor devices that detect or respond to non-ionizing infrared radiation through visible and ultraviolet light, as well as ionizing electromagnetic radiation and particle radiation. This subclass includes photodiodes, phototransistors, image sensors, and radiation detectors fabricated from materials such as silicon, germanium, and III-V compounds. Applications range from optical communication receivers and imaging systems to scientific radiation detection and particle counting instruments. Adjacent specialized detector technologies (such as thermopiles in H10G or photovoltaic solar cells in H10K) are classified separately.
Scope Notes
Glossary: active material active materials material within which the physical effects that are characteristic of the device occur coating coatings one or more layers which are formed essentially conformally on and directly associated with at least a portion of the semiconductor device, e.g. having passivating or optical effects Group IV material Group IV materials material comprising only Group IV elements, except for dopants or other impurities Group III-V material Group III-V materials material comprising only Group III and Group V elements, except for dopants or other impurities Group II-VI material material comprising only Group II and Group VI elements, except for dopants or other impurities Group I-III-VI material Group I-III-VI materials material comprising only Group I, Group III, and Group VI elements, except for dopants or other impurities heterojunction heterojunctions interface between two different materials, the difference lying in the crystal structure and/or the composition (example: p-type amorphous silicon / n-type crystalline silicon) homojunction homojunctions interface between materials having the same composition, the same crystal structure, and different dopants or dopant concentrations. intrinsic region or layer intrinsic region intrinsic layer intrinsic regions intrinsic layers semiconductor region or layer that is undoped or not intentionally doped such that electron and hole densities are approximately equal junction box enclosure attached to a photovoltaic module for electrically connecting modules together photovoltaic cell, solar cell photovoltaic cell solar cell photovoltaic cells solar cells photovoltaic device that converts electromagnetic radiation (e.g. light) into direct current electricity for the purpose of providing electrical energy (not for light detection purposes). It is often, but not necessarily, part of a photovoltaic module. photovoltaic module photovoltaic modules assembly of multiple photovoltaic cells that are electrically connected together PIN, p-i-n PIN p-i-n junction having a p-type region / intrinsic region / n-type region structure, wherein the intrinsic layer is the light-absorbing layer. Contrast with SHJ photovoltaic cells, wherein the intrinsic layer is not the light-absorbing layer. PN, p-n PN p-n junction having a p-type region / n-type region structure silicon heterojunction [SHJ] photovoltaic cell silicon heterojunction [SHJ] photovoltaic cells heterostructure comprising two silicon materials having different crystalline structure and including a very thin intrinsic interlayer therebetween, which is not the light-absorbing layer Schottky barrier Schottky barriers metal/semiconductor barrier that is non-ohmic and rectifying multiple-junction photovoltaic cell, tandem photovoltaic cell multiple-junction photovoltaic cell tandem photovoltaic cell multiple-junction photovoltaic cells tandem photovoltaic cells photovoltaic cell comprising multiple photovoltaic subcells formed on one another to form a single integrated structure usually between a single pair of anode/cathode electrodes. Typically each subcell has a different spectral sensitivity than each other. Tunnel junctions between subcells usually ensure the electrical connection and the current flow between the subcells. up-conversion process wherein two or more lower energy photons are converted to a single high energy photon to be absorbed by the photovoltaic cell. Up conversion layers are electrically isolated from the photovoltaic cell and are usually between the back reflector and the photovoltaic cell.
Related Keywords
8 direct subcodes
Child Classifications
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- H10F 10/00 Individual photovoltaic cells, e.g. solar cells
- H10F 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules
- H10F 30/00 Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
- H10F 55/00 Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F 71/00 Manufacture or treatment of devices covered by this subclass
- H10F 77/00 Constructional details of devices covered by this subclass
- H10F 99/00 Subject matter not provided for in other groups of this subclass