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CPC Subgroup Additional Only
G11C 2211/564

Miscellaneous aspects

Full Title

Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor > Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups > Miscellaneous aspects

10 direct subcodes

Child Classifications

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  • G11C 2211/5641 Multilevel memory having cells with different number of storage levels
  • G11C 2211/5642 Multilevel memory with buffers, latches, registers at input or output
  • G11C 2211/5643 Multilevel memory comprising cache storage devices
  • G11C 2211/5644 Multilevel memory comprising counting devices
  • G11C 2211/5645 Multilevel memory with current-mirror arrangements
  • G11C 2211/5646 Multilevel memory with flag bits, e.g. for showing that a "first page" of a word line is programmed but not a "second page"
  • G11C 2211/5647 Multilevel memory with bit inversion arrangement
  • G11C 2211/5648 Multilevel memory programming, reading or erasing operations wherein the order or sequence of the operations is relevant
  • G11C 2211/5649 Multilevel memory with plate line or layer, e.g. in order to lower programming voltages
  • G11C 2211/565 Multilevel memory comprising elements in triple well structure

Top Applicants

Top 10 applicants by patent filingsfor class G11, 2013–2023, worldwide · Source: EPO PATSTAT

  1. MICRON TECHNOLOGY US 12,397
  2. SAMSUNG ELECTRONICS COMPANY KR 12,238
  3. SK HYNIX KR 11,371
  4. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 4,601
  5. INTEL CORPORATION US 3,874
  6. IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 3,866
  7. SANDISK TECHNOLOGIES US 3,151
  8. SK HYNIX 3,143
  9. SAMSUNG ELECTRONICS COMPANY 3,073
  10. WESTERN DIGITAL TECHNOLOGIES US 2,961