CPC Subgroup
H01S 5/34366 Full Title
Semiconductor lasers (superluminescent diodes H10H20/00) > Structure or shape of the active region; Materials used for the active region > comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers (H01S5/36 takes precedence) > in AIIIBV compounds, e.g. AlGaAs-laser
Top Applicants
Top 10 applicants by patent filingsfor class H01, 2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG ELECTRONICS COMPANY KR 37,897
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 36,116
- APPLIED MATERIALS US 21,640
- LG ENERGY SOLUTION KR 20,770
- LG CHEM KR 19,835
- TOKYO ELECTRON JP 18,519
- ROBERT BOSCH DE 14,595
- INTEL CORPORATION US 13,580
- MURATA MANUFACTURING COMPANY JP 12,151
- SAMSUNG SDI COMPANY KR 12,080