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CPC Subgroup Additional Only
H03F 2203/45236

Two dif amps realised in MOS or JFET technology, one of them being of the p-channel type and the other one of the n-channel type, are coupled in parallel with their gates

Full Title

Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00 > Indexing scheme relating to differential amplifiers > Two dif amps realised in MOS or JFET technology, one of them being of the p-channel type and the other one of the n-channel type, are coupled in parallel with their gates

Top Applicants

Top 10 applicants by patent filingsfor class H03, 2013–2023, worldwide · Source: EPO PATSTAT

  1. SAMSUNG ELECTRONICS COMPANY KR 7,293
  2. QUALCOMM US 7,085
  3. MURATA MANUFACTURING COMPANY JP 5,982
  4. HUAWEI TECHNOLOGIES COMPANY CN 4,641
  5. INTEL CORPORATION US 3,863
  6. TEXAS INSTRUMENTS US 3,409
  7. MURATA MANUFACTURING COMPANY 2,874
  8. SK HYNIX KR 2,644
  9. SKYWORKS SOLUTIONS US 2,545
  10. IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 2,437