INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

Description

H10H covers inorganic semiconductor devices designed to emit light through the application of electrical potential barriers, primarily encompassing light-emitting diodes (LEDs) and related structures. These devices utilize p-n junctions or heterojunctions in inorganic materials (such as GaAs, GaN, InP, and silicon carbide) where charge carriers recombine across a potential barrier to generate photons. The classification includes LED architectures, quantum well structures, and similar technologies where the barrier engineering directly controls light emission characteristics. This subclass excludes organic light-emitting devices (covered under H10K) and laser diodes (covered under H01S), focusing instead on spontaneous emission devices.