CPC Subgroup
H10P 50/269 Full Title
Etching of wafers, substrates or parts of devices > Dry etching; Plasma etching; Reactive-ion etching > of conductive or resistive materials
H10P 50/269 Etching of wafers, substrates or parts of devices > Dry etching; Plasma etching; Reactive-ion etching > of conductive or resistive materials