Active solid-state devices, e.g. transistors, solid-state diodes

Child Classifications

Navigate with arrow keys, Enter to open

• Y10S 257/90 MOSFET type gate sidewall insulating spacer
• Y10S 257/901 MOSFET substrate bias
• Y10S 257/902 FET with metal source region
• Y10S 257/903 FET configuration adapted for use as static memory cell
• Y10S 257/905 Plural dram cells share common contact or common trench
• Y10S 257/906 Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
• Y10S 257/907 Folded bit line dram configuration
• Y10S 257/908 Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines
• Y10S 257/909 Macrocell arrays, e.g. gate arrays with variable size or configuration of cells
• Y10S 257/91 Diode arrays, e.g. diode read-only memory array
• Y10S 257/911 Light sensitive array adapted to be scanned by electron beam, e.g. vidicon device
• Y10S 257/912 Charge transfer device using both electron and hole signal carriers
• Y10S 257/913 with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering
• Y10S 257/914 Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
• Y10S 257/915 with titanium nitride portion or region
• Y10S 257/916 Narrow band gap semiconductor material, <<1ev
• Y10S 257/917 Plural dopants of same conductivity type in same region
• Y10S 257/918 Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry
• Y10S 257/919 Elements of similar construction connected in series or parallel to average out manufacturing variations in characteristics
• Y10S 257/92 Conductor layers on different levels connected in parallel, e.g. to reduce resistance
• Show 10 more