bit-organised, such as 2L/2D-organisation or three-dimensional [3D]-organisation, i.e. for selection of an element by means of at least two coincident partial currents both for reading and for writing

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor > using magnetic elements > using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element > using elements with single aperture or magnetic loop for storage, one element per bit, and for destructive read-out > bit-organised, such as 2L/2D-organisation or three-dimensional [3D]-organisation, i.e. for selection of an element by means of at least two coincident partial currents both for reading and for writing

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (G11C14/00 - G11C21/00 take precedence) > using magnetic elements > using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element > using elements with single aperture or magnetic loop for storage, one element per bit, and for destructive read-out > bit-organised, such as 2L/2D-organisation or three-dimensional [3D]-organisation, i.e. for selection of an element by means of at least two coincident partial currents both for reading and for writing