Safety or protection circuits, e.g. for preventing inadvertent or unauthorised reading or writing; Status cells; Test cells (protection of memory contents during checking or testing G11C29/52)

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor > using electric elements > using semiconductor devices > using transistors > forming cells needing refreshing or charge regeneration, i.e. dynamic cells > Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing > for memory cells of the field-effect type > Safety or protection circuits, e.g. for preventing inadvertent or unauthorised reading or writing; Status cells; Test cells

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (G11C14/00 - G11C21/00 take precedence) > using electric elements > using semiconductor devices > using transistors > forming cells needing refreshing or charge regeneration, i.e. dynamic cells > Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing > for memory cells of the field-effect type > Safety or protection circuits, e.g. for preventing inadvertent or unauthorised reading or writing; Status cells; Test cells (protection of memory contents during checking or testing G11C29/52)