for memory cells of the field-effect type

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor > using electric elements > using semiconductor devices > using transistors > forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger > Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction > for memory cells of the field-effect type

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (G11C14/00 - G11C21/00 take precedence) > using electric elements > using semiconductor devices > using transistors > forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger > Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction > for memory cells of the field-effect type