DIFF Subgroup Additional Only
G11C 2211/5614 Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements
Full Title
Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor > Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups > Multilevel memory cell aspects > Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements
Top Applicants
Top Applicants (IPC)
Class G11,2013–2023, worldwide · Source: EPO PATSTAT
- MICRON TECHNOLOGY US 10,574
- SK HYNIX KR 9,138
- SAMSUNG ELECTRONICS COMPANY KR 9,004
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 3,739
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 3,443
- INTEL CORPORATION US 2,952
- SANDISK TECHNOLOGIES US 2,905
- WESTERN DIGITAL TECHNOLOGIES US 2,630
- TOSHIBA CORPORATION JP 2,593
- SEAGATE TECHNOLOGY US 2,472
Top Applicants (CPC)
Class G11,2013–2023, worldwide · Source: EPO PATSTAT
- MICRON TECHNOLOGY US 12,397
- SAMSUNG ELECTRONICS COMPANY KR 12,238
- SK HYNIX KR 11,371
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 4,601
- INTEL CORPORATION US 3,874
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 3,866
- SANDISK TECHNOLOGIES US 3,151
- SK HYNIX 3,143
- SAMSUNG ELECTRONICS COMPANY 3,073
- WESTERN DIGITAL TECHNOLOGIES US 2,961