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DIFF Subgroup Additional Only
G11C 2211/5616

Multilevel magnetic memory cell using non-magnetic conducting interlayer, e.g. GMR, SV, PSV

Full Title

Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor > Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups > Multilevel memory cell aspects > Multilevel magnetic memory cell using non-magnetic conducting interlayer, e.g. GMR, SV, PSV

Top Applicants

Top Applicants (IPC)

Class G11,2013–2023, worldwide · Source: EPO PATSTAT

  1. MICRON TECHNOLOGY US 10,574
  2. SK HYNIX KR 9,138
  3. SAMSUNG ELECTRONICS COMPANY KR 9,004
  4. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 3,739
  5. IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 3,443
  6. INTEL CORPORATION US 2,952
  7. SANDISK TECHNOLOGIES US 2,905
  8. WESTERN DIGITAL TECHNOLOGIES US 2,630
  9. TOSHIBA CORPORATION JP 2,593
  10. SEAGATE TECHNOLOGY US 2,472

Top Applicants (CPC)

Class G11,2013–2023, worldwide · Source: EPO PATSTAT

  1. MICRON TECHNOLOGY US 12,397
  2. SAMSUNG ELECTRONICS COMPANY KR 12,238
  3. SK HYNIX KR 11,371
  4. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 4,601
  5. INTEL CORPORATION US 3,874
  6. IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 3,866
  7. SANDISK TECHNOLOGIES US 3,151
  8. SK HYNIX 3,143
  9. SAMSUNG ELECTRONICS COMPANY 3,073
  10. WESTERN DIGITAL TECHNOLOGIES US 2,961