H10F 19/75 the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
Introduced: January 2025
Full Title
Full titles differ between systems:
Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules > comprising bypass diodes > the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules > comprising bypass diodes (bypass diodes in a junction box H02S40/34) > the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
No child classifications to compare. This is a leaf node in both IPC and CPC.
Top Applicants
Top Applicants (IPC)
Class H10,2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 21,044
- SAMSUNG ELECTRONICS COMPANY KR 14,774
- LG DISPLAY COMPANY KR 9,454
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 8,301
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 7,642
- BOE TECHNOLOGY GROUP COMPANY 6,845
- BOE TECHNOLOGY GROUP COMPANY CN 6,806
- SAMSUNG DISPLAY 6,577
- LG CHEM KR 5,461
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 5,115
Top Applicants (CPC)
Class H10,2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 38,446
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 30,922
- SAMSUNG ELECTRONICS COMPANY KR 30,059
- BOE TECHNOLOGY GROUP COMPANY CN 20,304
- LG DISPLAY COMPANY KR 17,772
- BOE TECHNOLOGY GROUP COMPANY 15,621
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 13,629
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 11,750
- SAMSUNG DISPLAY 11,316
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 9,697