DIFF Subgroup
H10F 30/28 the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
Introduced: January 2025
Full Title
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors > the devices having potential barriers, e.g. phototransistors > the devices being sensitive to infrared, visible or ultraviolet radiation > the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
CPC subdivides this area 5x more granularly than IPC with 4 additional codes.
4 codes are CPC-only extensions.
IPC defines codes here since 2025.
Child Classifications
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- H10F 30/282 Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors since 2025 IPC+CPC Available in IPC and CPC