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DIFF Subgroup
H10F 30/2955

Full Title

Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors > the devices having potential barriers, e.g. phototransistors > the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation > Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors

Top Applicants

Top Applicants (IPC)

Class H10,2013–2023, worldwide · Source: EPO PATSTAT

  1. SAMSUNG DISPLAY KR 21,044
  2. SAMSUNG ELECTRONICS COMPANY KR 14,774
  3. LG DISPLAY COMPANY KR 9,454
  4. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 8,301
  5. SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 7,642
  6. BOE TECHNOLOGY GROUP COMPANY 6,845
  7. BOE TECHNOLOGY GROUP COMPANY CN 6,806
  8. SAMSUNG DISPLAY 6,577
  9. LG CHEM KR 5,461
  10. SEMICONDUCTOR ENERGY LABORATORY COMPANY 5,115

Top Applicants (CPC)

Class H10,2013–2023, worldwide · Source: EPO PATSTAT

  1. SAMSUNG DISPLAY KR 38,446
  2. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 30,922
  3. SAMSUNG ELECTRONICS COMPANY KR 30,059
  4. BOE TECHNOLOGY GROUP COMPANY CN 20,304
  5. LG DISPLAY COMPANY KR 17,772
  6. BOE TECHNOLOGY GROUP COMPANY 15,621
  7. SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 13,629
  8. IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 11,750
  9. SAMSUNG DISPLAY 11,316
  10. SEMICONDUCTOR ENERGY LABORATORY COMPANY 9,697