DIFF Subgroup Additional Only
Y10S 257/929 PN junction isolated integrated circuit with isolation walls having minimum dopant concentration at intermediate depth in epitaxial layer, e.g. diffused from both surfaces of epitaxial layer
Full Title
Active solid-state devices, e.g. transistors, solid-state diodes > PN junction isolated integrated circuit with isolation walls having minimum dopant concentration at intermediate depth in epitaxial layer, e.g. diffused from both surfaces of epitaxial layer
Top Applicants
Top Applicants (CPC)
Class Y10,2013–2023, worldwide · Source: EPO PATSTAT
- BOEING COMPANY US 2,373
- FORD GLOBAL TECHNOLOGIES US 2,244
- HYUNDAI MOTOR COMPANY KR 2,186
- TOYOTA MOTOR CORPORATION JP 1,997
- 3M INNOVATIVE PROPERTIES COMPANY (MINNESOTA MINING AND MANUFACTURING INNOVATIVE PROPERTIES COMPANY) US 1,837
- GE (GENERAL ELECTRIC COMPANY) US 1,794
- SAMSUNG ELECTRONICS COMPANY KR 1,705
- CORNING US 1,569
- TOYOTA MOTOR CORPORATION 1,403
- LG CHEM KR 1,364