IPC Subgroup
H01S 5/347 in AB compounds, e.g. ZnCdSe-laser
Introduced: January 2000
Last revised: January 2006
Full Title
Semiconductor lasers > Structure or shape of the active region; Materials used for the active region > comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers > in AB compounds, e.g. ZnCdSe-laser
Classification Context
- Section:
- ELECTRICITY
- Class:
- ELECTRIC ELEMENTS
- Subclass:
- DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
Top Applicants
Top 10 applicants by patent filingsfor class H01, 2013–2023, worldwide · Source: EPO PATSTAT
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 43,574
- SAMSUNG ELECTRONICS COMPANY KR 42,206
- LG CHEM KR 21,383
- APPLIED MATERIALS US 20,441
- LG ENERGY SOLUTION KR 20,279
- SAMSUNG DISPLAY KR 19,725
- CHINESE ACADEMY OF SCIENCES 19,400
- TOYOTA MOTOR CORPORATION 18,819
- SGCC(STATE GRID CORPORATION OF CHINA) 18,082
- TOKYO ELECTRON JP 17,634