Bodies

Full Title

Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED] > Constructional details > Bodies

Classification Context

Section:

ELECTRICITY

Class:

SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

Subclass:

INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

Child Classifications

Navigate with arrow keys, Enter to open

• H10H 20/811 having quantum effect structures or superlattices, e.g. tunnel junctions
• H10H 20/813 having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
• H10H 20/814 having reflecting means, e.g. semiconductor Bragg reflectors
• H10H 20/815 having stress relaxation structures, e.g. buffer layers
• H10H 20/816 having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
• H10H 20/817 characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
• H10H 20/819 characterised by their shape, e.g. curved or truncated substrates
• H10H 20/822 Materials of the light-emitting regions