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IPC Subgroup
H10P 36/2

Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body

Introduced: January 2026

Full Title

Gettering within semiconductor bodies > Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body

Classification Context

Section:
ELECTRICITY
Class:
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
Subclass:
GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS