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CPC Subgroup Additional Only
B81C 2201/0163

Controlling internal stress of deposited layers

Full Title

Manufacture or treatment of microstructural devices or systems > in or on a substrate > Controlling physical properties of the material > Controlling internal stress of deposited layers

5 direct subcodes

Child Classifications

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  • B81C 2201/0164 by doping the layer
  • B81C 2201/0166 by ion implantation
  • B81C 2201/0167 by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
  • B81C 2201/0169 by post-annealing
  • B81C 2201/017 Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169

Top Applicants

Top 10 applicants by patent filingsfor class B81, 2013–2023, worldwide · Source: EPO PATSTAT

  1. ROBERT BOSCH DE 1,976
  2. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 788
  3. INFINEON TECHNOLOGIES DE 759
  4. CEA (COMMISSARIAT A L'ENERGIE ATOMIQUE) FR 555
  5. STMICROELECTRONICS IT 526
  6. INVENSENSE US 430
  7. MURATA MANUFACTURING COMPANY JP 418
  8. SEIKO EPSON CORPORATION 338
  9. CHINESE ACADEMY OF SCIENCES 338
  10. FRAUNHOFER DE 297