CPC Subgroup Additional Only
B81C 2201/0163 Controlling internal stress of deposited layers
Full Title
Manufacture or treatment of microstructural devices or systems > in or on a substrate > Controlling physical properties of the material > Controlling internal stress of deposited layers
5 direct subcodes
Child Classifications
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- B81C 2201/0164 by doping the layer
- B81C 2201/0166 by ion implantation
- B81C 2201/0167 by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
- B81C 2201/0169 by post-annealing
- B81C 2201/017 Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169
Top Applicants
Top 10 applicants by patent filingsfor class B81, 2013–2023, worldwide · Source: EPO PATSTAT
- ROBERT BOSCH DE 1,976
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 788
- INFINEON TECHNOLOGIES DE 759
- CEA (COMMISSARIAT A L'ENERGIE ATOMIQUE) FR 555
- STMICROELECTRONICS IT 526
- INVENSENSE US 430
- MURATA MANUFACTURING COMPANY JP 418
- SEIKO EPSON CORPORATION 338
- CHINESE ACADEMY OF SCIENCES 338
- FRAUNHOFER DE 297