CPC Subgroup
C30B 13/12 in the gaseous or vapour state
Full Title
Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00) > adding crystallising materials or reactants forming it in situ to the molten zone > with addition of doping materials > in the gaseous or vapour state
Top Applicants
Top 10 applicants by patent filingsfor class C30, 2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,052
- SUMCO CORPORATION JP 881
- APPLIED MATERIALS US 871
- SUMITOMO ELECTRIC INDUSTRIES JP 682
- SHIN ETSU HANDOTAI COMPANY JP 649
- SHIN-ETSU CHEMICAL COMPANY JP 506
- SUMCO CORPORATION 500
- SILTRONIC DE 491
- GLOBALWAFERS COMPANY TW 458
- NGK INSULATORS JP 379