CPC Class Not Allocatable
C30 CRYSTAL GROWTH
Description
C30 covers techniques and apparatus for the controlled growth and formation of crystals from various starting materials, including melt, solution, vapor, and solid-state methods. This class encompasses methods for producing single crystals, polycrystalline materials, and epitaxial layers used in semiconductors, optics, and metallurgy. Technologies such as Czochralski pulling, Bridgman growth, vapor deposition, and hydrothermal synthesis fall within this scope, along with associated equipment and process control systems.
1 direct subcode
Child Classifications
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- C30B SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
Top Applicants
Top 10 applicants by patent filings, 2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,052
- SUMCO CORPORATION JP 881
- APPLIED MATERIALS US 871
- SUMITOMO ELECTRIC INDUSTRIES JP 682
- SHIN ETSU HANDOTAI COMPANY JP 649
- SHIN-ETSU CHEMICAL COMPANY JP 506
- SUMCO CORPORATION 500
- SILTRONIC DE 491
- GLOBALWAFERS COMPANY TW 458
- NGK INSULATORS JP 379