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CPC Subgroup
C30B 15/24

using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B15/34)

Full Title

Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00) > Controlling or regulating (controlling or regulating in general G05) > Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal > using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B15/34)

Top Applicants

Top 10 applicants by patent filingsfor class C30, 2013–2023, worldwide · Source: EPO PATSTAT

  1. CHINESE ACADEMY OF SCIENCES 1,052
  2. SUMCO CORPORATION JP 881
  3. APPLIED MATERIALS US 871
  4. SUMITOMO ELECTRIC INDUSTRIES JP 682
  5. SHIN ETSU HANDOTAI COMPANY JP 649
  6. SHIN-ETSU CHEMICAL COMPANY JP 506
  7. SUMCO CORPORATION 500
  8. SILTRONIC DE 491
  9. GLOBALWAFERS COMPANY TW 458
  10. NGK INSULATORS JP 379