CPC Subgroup
C30B 15/24 using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B15/34)
Full Title
Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00) > Controlling or regulating (controlling or regulating in general G05) > Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal > using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B15/34)
Top Applicants
Top 10 applicants by patent filingsfor class C30, 2013–2023, worldwide · Source: EPO PATSTAT
- CHINESE ACADEMY OF SCIENCES 1,052
- SUMCO CORPORATION JP 881
- APPLIED MATERIALS US 871
- SUMITOMO ELECTRIC INDUSTRIES JP 682
- SHIN ETSU HANDOTAI COMPANY JP 649
- SHIN-ETSU CHEMICAL COMPANY JP 506
- SUMCO CORPORATION 500
- SILTRONIC DE 491
- GLOBALWAFERS COMPANY TW 458
- NGK INSULATORS JP 379