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PCE
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CPC Subgroup
G11C 11/402

with charge regeneration individual to each memory cell, i.e. internal refresh

Full Title

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (G11C14/00 - G11C21/00 take precedence) > using electric elements > using semiconductor devices > using transistors > forming cells needing refreshing or charge regeneration, i.e. dynamic cells > with charge regeneration individual to each memory cell, i.e. internal refresh

2 direct subcodes

Child Classifications

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Top Applicants

Top 10 applicants by patent filingsfor class G11, 2013–2023, worldwide · Source: EPO PATSTAT

  1. MICRON TECHNOLOGY US 12,397
  2. SAMSUNG ELECTRONICS COMPANY KR 12,238
  3. SK HYNIX KR 11,371
  4. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 4,601
  5. INTEL CORPORATION US 3,874
  6. IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 3,866
  7. SANDISK TECHNOLOGIES US 3,151
  8. SK HYNIX 3,143
  9. SAMSUNG ELECTRONICS COMPANY 3,073
  10. WESTERN DIGITAL TECHNOLOGIES US 2,961