CPC Subgroup
G11C 11/403 with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
Full Title
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (G11C14/00 - G11C21/00 take precedence) > using electric elements > using semiconductor devices > using transistors > forming cells needing refreshing or charge regeneration, i.e. dynamic cells > with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
2 direct subcodes
Child Classifications
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- G11C 11/404 with one charge-transfer gate, e.g. MOS transistor, per cell
- G11C 11/405 with three charge-transfer gates, e.g. MOS transistors, per cell
Top Applicants
Top 10 applicants by patent filingsfor class G11, 2013–2023, worldwide · Source: EPO PATSTAT
- MICRON TECHNOLOGY US 12,397
- SAMSUNG ELECTRONICS COMPANY KR 12,238
- SK HYNIX KR 11,371
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 4,601
- INTEL CORPORATION US 3,874
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 3,866
- SANDISK TECHNOLOGIES US 3,151
- SK HYNIX 3,143
- SAMSUNG ELECTRONICS COMPANY 3,073
- WESTERN DIGITAL TECHNOLOGIES US 2,961