for memory cells of the field-effect type

Full Title

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (G11C14/00 - G11C21/00 take precedence) > using electric elements > using semiconductor devices > using transistors > forming cells needing refreshing or charge regeneration, i.e. dynamic cells > Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing > for memory cells of the field-effect type

Child Classifications

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• G11C 11/4072 Circuits for initialization, powering up or down, clearing memory or presetting
• G11C 11/4074 Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
• G11C 11/4076 Timing circuits (for regeneration management G11C11/406)
• G11C 11/4078 Safety or protection circuits, e.g. for preventing inadvertent or unauthorised reading or writing; Status cells; Test cells (protection of memory contents during checking or testing G11C29/52)
• G11C 11/408 Address circuits
• G11C 11/409 Read-write [R-W] circuits