Read-write [R-W] circuits

Full Title

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (G11C14/00 - G11C21/00 take precedence) > using electric elements > using semiconductor devices > using transistors > forming cells needing refreshing or charge regeneration, i.e. dynamic cells > Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing > for memory cells of the field-effect type > Read-write [R-W] circuits

Child Classifications

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• G11C 11/4091 Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
• G11C 11/4093 Input/output [I/O] data interface arrangements, e.g. data buffers
• G11C 11/4094 Bit-line management or control circuits
• G11C 11/4096 Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
• G11C 11/4097 Bit-line organisation, e.g. bit-line layout, folded bit lines
• G11C 11/4099 Dummy cell treatment; Reference voltage generators