Resistive cells; Technology aspects

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Indexing scheme relating to G11C13/00 for features not covered by this group > Resistive cells; Technology aspects

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• G11C 2213/11 Metal ion trapping, i.e. using memory material including cavities, pores or spaces in form of tunnels or channels wherein metal ions can be trapped but do not react and form an electro-deposit creating filaments or dendrites
• G11C 2213/12 Non-metal ion trapping, i.e. using memory material trapping non-metal ions given by the electrode or another layer during a write operation, e.g. trapping, doping
• G11C 2213/13 Dissociation, i.e. using memory material including molecules which, during a write operation, are dissociated in ions which migrate further in the memory material
• G11C 2213/14 Use of different molecule structures as storage states, e.g. part of molecule being rotated
• G11C 2213/15 Current-voltage curve
• G11C 2213/16 Memory cell being a nanotube, e.g. suspended nanotube
• G11C 2213/17 Memory cell being a nanowire transistor
• G11C 2213/18 Memory cell being a nanowire having RADIAL composition
• G11C 2213/19 Memory cell comprising at least a nanowire and only two terminals