CPC Subgroup Additional Only
G11C 2213/30 Resistive cell, memory material aspects
Full Title
Indexing scheme relating to G11C13/00 for features not covered by this group > Resistive cell, memory material aspects
5 direct subcodes
Child Classifications
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- G11C 2213/31 Material having complex metal oxide, e.g. perovskite structure
- G11C 2213/32 Material having simple binary metal oxide structure
- G11C 2213/33 Material including silicon
- G11C 2213/34 Material includes an oxide or a nitride
- G11C 2213/35 Material including carbon, e.g. graphite, grapheme
Top Applicants
Top 10 applicants by patent filingsfor class G11, 2013–2023, worldwide · Source: EPO PATSTAT
- MICRON TECHNOLOGY US 12,397
- SAMSUNG ELECTRONICS COMPANY KR 12,238
- SK HYNIX KR 11,371
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 4,601
- INTEL CORPORATION US 3,874
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 3,866
- SANDISK TECHNOLOGIES US 3,151
- SK HYNIX 3,143
- SAMSUNG ELECTRONICS COMPANY 3,073
- WESTERN DIGITAL TECHNOLOGIES US 2,961