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CPC Subgroup Additional Only
G11C 2213/51

Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode

Full Title

Indexing scheme relating to G11C13/00 for features not covered by this group > Resistive cell structure aspects > Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode

Top Applicants

Top 10 applicants by patent filingsfor class G11, 2013–2023, worldwide · Source: EPO PATSTAT

  1. MICRON TECHNOLOGY US 12,397
  2. SAMSUNG ELECTRONICS COMPANY KR 12,238
  3. SK HYNIX KR 11,371
  4. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 4,601
  5. INTEL CORPORATION US 3,874
  6. IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 3,866
  7. SANDISK TECHNOLOGIES US 3,151
  8. SK HYNIX 3,143
  9. SAMSUNG ELECTRONICS COMPANY 3,073
  10. WESTERN DIGITAL TECHNOLOGIES US 2,961