Resistive cell structure aspects

Full Title

Indexing scheme relating to G11C13/00 for features not covered by this group > Resistive cell structure aspects

Child Classifications

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• G11C 2213/51 Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode
• G11C 2213/52 Structure characterized by the electrode material, shape, etc.
• G11C 2213/53 Structure wherein the resistive material being in a transistor, e.g. gate
• G11C 2213/54 Structure including a tunneling barrier layer, the memory effect implying the modification of tunnel barrier conductivity
• G11C 2213/55 Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer
• G11C 2213/56 Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way