Resistive array aspects

Full Title

Indexing scheme relating to G11C13/00 for features not covered by this group > Resistive array aspects

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• G11C 2213/71 Three dimensional array
• G11C 2213/72 Array wherein the access device being a diode
• G11C 2213/73 Array where access device function, e.g. diode function, being merged with memorizing function of memory element
• G11C 2213/74 Array wherein each memory cell has more than one access device
• G11C 2213/75 Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor
• G11C 2213/76 Array using an access device for each cell which being not a transistor and not a diode
• G11C 2213/77 Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
• G11C 2213/78 Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver
• G11C 2213/79 Array wherein the access device being a transistor
• G11C 2213/80 Array wherein the substrate, the cell, the conductors and the access device are all made up of organic materials
• G11C 2213/81 Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
• G11C 2213/82 Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials