CPC Subgroup Additional Only
G11C 2216/08 Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
Full Title
Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups > Structural aspects of erasable programmable read-only memories > Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory