CPC Subgroup Additional Only
G11C 2216/08 Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
Full Title
Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups > Structural aspects of erasable programmable read-only memories > Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
Top Applicants
Top 10 applicants by patent filingsfor class G11, 2013–2023, worldwide · Source: EPO PATSTAT
- MICRON TECHNOLOGY US 12,397
- SAMSUNG ELECTRONICS COMPANY KR 12,238
- SK HYNIX KR 11,371
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 4,601
- INTEL CORPORATION US 3,874
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 3,866
- SANDISK TECHNOLOGIES US 3,151
- SK HYNIX 3,143
- SAMSUNG ELECTRONICS COMPANY 3,073
- WESTERN DIGITAL TECHNOLOGIES US 2,961