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PCE
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CPC Subgroup Additional Only
G11C 2216/08

Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory

Full Title

Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups > Structural aspects of erasable programmable read-only memories > Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory