Structural aspects of erasable programmable read-only memories

Full Title

Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups > Structural aspects of erasable programmable read-only memories

Child Classifications

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• G11C 2216/04 Nonvolatile memory cell provided with a separate control gate for erasing the cells, i.e. erase gate, independent of the normal read control gate
• G11C 2216/06 Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals
• G11C 2216/08 Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
• G11C 2216/10 Floating gate memory cells with a single polysilicon layer