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CPC Subgroup Additional Only
G11C 2216/28

Floating gate memory programmed by reverse programming, e.g. programmed with negative gate voltage and erased with positive gate voltage or programmed with high source or drain voltage and erased with high gate voltage

Full Title

Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups > Reading and writing aspects of erasable programmable read-only memories > Floating gate memory programmed by reverse programming, e.g. programmed with negative gate voltage and erased with positive gate voltage or programmed with high source or drain voltage and erased with high gate voltage

Filing statistics

CPC G11C 2216/28 belongs to the parent subclass G11C, which recorded 152,594 patent applications worldwide between 2013 and 2023. Annual filings grew from 10,826 in 2013 to 13,151 in 2023 (+21%), peaking at 17,166 applications in 2021. The most active applicants in class G11 are MICRON TECHNOLOGY (12,397 applications), SAMSUNG ELECTRONICS COMPANY (12,238 applications) and SK HYNIX (11,371 applications).

Source: EPO PATSTAT, worldwide filings

Top Applicants

Top 10 applicants by patent filingsfor class G11, 2013–2023, worldwide · Source: EPO PATSTAT

  1. MICRON TECHNOLOGY US 12,397
  2. SAMSUNG ELECTRONICS COMPANY KR 12,238
  3. SK HYNIX KR 11,371
  4. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 4,601
  5. INTEL CORPORATION US 3,874
  6. IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 3,866
  7. SANDISK TECHNOLOGIES US 3,151
  8. SK HYNIX 3,143
  9. SAMSUNG ELECTRONICS COMPANY 3,073
  10. WESTERN DIGITAL TECHNOLOGIES US 2,961