Floating gate memory programmed by reverse programming, e.g. programmed with negative gate voltage and erased with positive gate voltage or programmed with high source or drain voltage and erased with high gate voltage

Full Title

Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups > Reading and writing aspects of erasable programmable read-only memories > Floating gate memory programmed by reverse programming, e.g. programmed with negative gate voltage and erased with positive gate voltage or programmed with high source or drain voltage and erased with high gate voltage