Generators characterised by the type of circuit or by the means used for producing pulses (H03K3/64 - H03K3/84 take precedence)

Full Title

Circuits for generating electric pulses; Monostable, bistable or multistable circuits (H03K4/00 takes precedence; for digital function generators in computers G06F1/02) > Generators characterised by the type of circuit or by the means used for producing pulses (H03K3/64 - H03K3/84 take precedence)

Child Classifications

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• H03K 3/021 by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT
• H03K 3/023 by the use of differential amplifiers or comparators, with internal or external positive feedback
• H03K 3/027 by the use of logic circuits, with internal or external positive feedback
• H03K 3/04 by the use, as active elements, of vacuum tubes only, with positive feedback (H03K3/023, H03K3/027 take precedence)
• H03K 3/26 by the use, as active elements, of bipolar transistors with internal or external positive feedback (H03K3/023, H03K3/027 take precedence)
• H03K 3/313 by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
• H03K 3/33 by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect
• H03K 3/335 by the use, as active elements, of semiconductor devices with more than two electrodes and exhibiting avalanche effect
• H03K 3/35 by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region (H03K3/023, H03K3/027 take precedence)
• H03K 3/353 by the use, as active elements, of field-effect transistors with internal or external positive feedback (H03K3/023, H03K3/027 take precedence)
• H03K 3/357 by the use, as active elements, of bulk negative resistance devices, e.g. Gunn-effect devices
• H03K 3/36 by the use, as active elements, of semiconductors, not otherwise provided for
• H03K 3/37 by the use, as active elements, of gas-filled tubes, e.g. astable trigger circuits (H03K3/55 takes precedence)
• H03K 3/38 by the use, as active elements, of superconductive devices
• H03K 3/40 by the use, as active elements, of electrochemical cells
• H03K 3/42 by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
• H03K 3/43 by the use, as active elements, of beam deflection tubes
• H03K 3/45 by the use, as active elements, of non-linear magnetic or dielectric devices
• H03K 3/53 by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback (H03K3/335 takes precedence)
• H03K 3/59 by the use of galvano-magnetic devices, e.g. Hall effect devices