Generators characterised by the type of circuit or by the means used for producing pulses (H03K3/64 - H03K3/84 take precedence)

Child Classifications

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• H03K 3/021 by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT since 1995 IPC+CPC Available in IPC and CPC
• H03K 3/023 by the use of differential amplifiers or comparators, with internal or external positive feedback since 1980 IPC+CPC Available in IPC and CPC
• H03K 3/027 by the use of logic circuits, with internal or external positive feedback since 1980 IPC+CPC Available in IPC and CPC
• H03K 3/04 by the use, as active elements, of vacuum tubes only, with positive feedback (H03K3/023, H03K3/027 take precedence) IPC+CPC Available in IPC and CPC
• H03K 3/26 by the use, as active elements, of bipolar transistors with internal or external positive feedback (H03K3/023, H03K3/027 take precedence) IPC+CPC Available in IPC and CPC
• H03K 3/313 by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic since 1980 IPC+CPC Available in IPC and CPC
• H03K 3/33 by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect IPC+CPC Available in IPC and CPC
• H03K 3/335 by the use, as active elements, of semiconductor devices with more than two electrodes and exhibiting avalanche effect IPC+CPC Available in IPC and CPC
• H03K 3/35 by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region (H03K3/023, H03K3/027 take precedence) IPC+CPC Available in IPC and CPC
• H03K 3/353 by the use, as active elements, of field-effect transistors with internal or external positive feedback (H03K3/023, H03K3/027 take precedence) since 1974 IPC+CPC Available in IPC and CPC
• H03K 3/357 by the use, as active elements, of bulk negative resistance devices, e.g. Gunn-effect devices since 1974 IPC+CPC Available in IPC and CPC
• H03K 3/36 by the use, as active elements, of semiconductors, not otherwise provided for since 1974 IPC+CPC Available in IPC and CPC
• H03K 3/37 by the use, as active elements, of gas-filled tubes, e.g. astable trigger circuits (H03K3/55 takes precedence) IPC+CPC Available in IPC and CPC
• H03K 3/38 by the use, as active elements, of superconductive devices IPC+CPC Available in IPC and CPC
• H03K 3/40 by the use, as active elements, of electrochemical cells IPC+CPC Available in IPC and CPC
• H03K 3/42 by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled IPC+CPC Available in IPC and CPC
• H03K 3/43 by the use, as active elements, of beam deflection tubes IPC+CPC Available in IPC and CPC
• H03K 3/45 by the use, as active elements, of non-linear magnetic or dielectric devices +1 CPC IPC+CPC Available in IPC and CPC
• H03K 3/53 by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback (H03K3/335 takes precedence) IPC+CPC Available in IPC and CPC
• H03K 3/59 by the use of galvano-magnetic devices, e.g. Hall effect devices since 1974 IPC+CPC Available in IPC and CPC