CPC Subgroup
H04N 25/71 Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
Full Title
Circuitry of solid-state image sensors [SSIS]; Control thereof > SSIS architectures; Circuits associated therewith > Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
8 direct subcodes
Child Classifications
Navigate with arrow keys, Enter to open
- H04N 25/711 Time delay and integration [TDI] registers; TDI shift registers
- H04N 25/713 Transfer or readout registers; Split readout registers or multiple readout registers
- H04N 25/715 using frame interline transfer [FIT]
- H04N 25/72 using frame transfer [FT]
- H04N 25/73 using interline transfer [IT]
- H04N 25/74 Circuitry for scanning or addressing the pixel array
- H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array
Top Applicants
Top 10 applicants by patent filingsfor class H04, 2013–2023, worldwide · Source: EPO PATSTAT
- HUAWEI TECHNOLOGIES COMPANY CN 101,476
- QUALCOMM US 101,139
- SAMSUNG ELECTRONICS COMPANY KR 96,655
- TELEFONAKTIEBOLAGET LM ERICSSON (PUBL) SE 57,744
- LG ELECTRONICS KR 55,253
- HUAWEI TECHNOLOGIES COMPANY 54,181
- SONY CORPORATION JP 35,309
- ZTE CORPORATION CN 32,950
- INTEL CORPORATION US 27,533
- GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORPORATION CN 27,498