CPC Subgroup
H10B 43/20 characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
Full Title
EEPROM devices comprising charge-trapping gate insulators > characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
1 direct subcode
Child Classifications
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- H10B 43/23 with source and drain on different levels, e.g. with sloping channels