CPC Subgroup
H10B 43/23 with source and drain on different levels, e.g. with sloping channels
Full Title
EEPROM devices comprising charge-trapping gate insulators > characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels > with source and drain on different levels, e.g. with sloping channels
1 direct subcode
Child Classifications
Navigate with arrow keys, Enter to open
- H10B 43/27 the channels comprising vertical portions, e.g. U-shaped channels