CPC Main Group
H10D 8/00 Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00)
12 direct subcodes
Child Classifications
Navigate with arrow keys, Enter to open
- H10D 8/01 Manufacture or treatment
- H10D 8/20 Breakdown diodes, e.g. avalanche diodes
- H10D 8/30 Point-contact diodes
- H10D 8/40 Transit-time diodes, e.g. IMPATT or TRAPATT diodes
- H10D 8/50 PIN diodes
- H10D 8/60 Schottky-barrier diodes
- H10D 8/70 Tunnel-effect diodes
- H10D 8/80 PNPN diodes, e.g. Shockley diodes or break-over diodes
Top Applicants
Top 10 applicants by patent filingsfor class H10, 2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 38,446
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 30,922
- SAMSUNG ELECTRONICS COMPANY KR 30,059
- BOE TECHNOLOGY GROUP COMPANY CN 20,304
- LG DISPLAY COMPANY KR 17,772
- BOE TECHNOLOGY GROUP COMPANY 15,621
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 13,629
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 11,750
- SAMSUNG DISPLAY 11,316
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 9,697