H10D INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
Description
H10D covers inorganic semiconductor devices and solid-state electronic components not classified elsewhere in section H10. This subclass encompasses a broad range of semiconductor technologies including diodes, transistors, thyristors, and other discrete or integrated inorganic semiconductor devices based on materials such as silicon, germanium, gallium arsenide, and similar compounds. It serves as a residual category for inorganic semiconductor inventions that do not fall within the more specialized subclasses H10B (semiconductor devices with at least one potential-jump barrier or surface barrier), H10F (unspecified semiconductor devices), or other dedicated H10 classifications. Typical applications include power electronics, microwave devices, and specialized semiconductor components for which no specific classification exists.
17 direct subcodes
Child Classifications
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- H10D 1/00 Resistors, capacitors or inductors
- H10D 10/00 Bipolar junction transistors [BJT]
- H10D 12/00 Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D 18/00 Thyristors
- H10D 30/00 Field-effect transistors [FET] (insulated-gate bipolar transistors H10D12/00)
- H10D 44/00 Charge transfer devices
- H10D 48/00 Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D 62/00 Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D 64/00 Electrodes of devices having potential barriers
- H10D 8/00 Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00)
- H10D 80/00 Assemblies of multiple devices comprising at least one device covered by this subclass
- H10D 84/00 Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D 86/00 Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D 87/00 Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
- H10D 88/00 Three-dimensional [3D] integrated devices
- H10D 89/00 Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D 99/00 Subject matter not provided for in other groups of this subclass
Top Applicants
Top 10 applicants by patent filingsfor class H10, 2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 38,446
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 30,922
- SAMSUNG ELECTRONICS COMPANY KR 30,059
- BOE TECHNOLOGY GROUP COMPANY CN 20,304
- LG DISPLAY COMPANY KR 17,772
- BOE TECHNOLOGY GROUP COMPANY 15,621
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 13,629
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 11,750
- SAMSUNG DISPLAY 11,316
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 9,697