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PCE
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CPC Subgroup
H10D 86/03

wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]

Full Title

Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates > Manufacture or treatment > wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]