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CPC Subgroup
H10F 30/282

Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors

Full Title

Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors > the devices having potential barriers, e.g. phototransistors > the devices being sensitive to infrared, visible or ultraviolet radiation > the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors > Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors

Top Applicants

Top 10 applicants by patent filingsfor class H10, 2013–2023, worldwide · Source: EPO PATSTAT

  1. SAMSUNG DISPLAY KR 38,446
  2. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 30,922
  3. SAMSUNG ELECTRONICS COMPANY KR 30,059
  4. BOE TECHNOLOGY GROUP COMPANY CN 20,304
  5. LG DISPLAY COMPANY KR 17,772
  6. BOE TECHNOLOGY GROUP COMPANY 15,621
  7. SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 13,629
  8. IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 11,750
  9. SAMSUNG DISPLAY 11,316
  10. SEMICONDUCTOR ENERGY LABORATORY COMPANY 9,697