CPC Subgroup
H10F 30/282 Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
Full Title
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors > the devices having potential barriers, e.g. phototransistors > the devices being sensitive to infrared, visible or ultraviolet radiation > the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors > Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
Top Applicants
Top 10 applicants by patent filingsfor class H10, 2013–2023, worldwide · Source: EPO PATSTAT
- SAMSUNG DISPLAY KR 38,446
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY TW 30,922
- SAMSUNG ELECTRONICS COMPANY KR 30,059
- BOE TECHNOLOGY GROUP COMPANY CN 20,304
- LG DISPLAY COMPANY KR 17,772
- BOE TECHNOLOGY GROUP COMPANY 15,621
- SEMICONDUCTOR ENERGY LABORATORY COMPANY JP 13,629
- IBM (INTERNATIONAL BUSINESS MACHINES CORPORATION) US 11,750
- SAMSUNG DISPLAY 11,316
- SEMICONDUCTOR ENERGY LABORATORY COMPANY 9,697