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PCE
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IPC Subgroup
H10F 30/282

Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors

Introduced: January 2025

Full Title

Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors > the devices having potential barriers, e.g. phototransistors > the devices being sensitive to infrared, visible or ultraviolet radiation > the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors > Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors

Classification Context

Section:
ELECTRICITY
Class:
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
Subclass:
INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION