Semiconductor device manufacturing: process

Child Classifications

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• Y10S 438/90 Bulk effect device making
• Y10S 438/901 Capacitive junction
• Y10S 438/902 Capping layer
• Y10S 438/903 Catalyst aided deposition
• Y10S 438/904 Charge carrier lifetime control
• Y10S 438/905 Cleaning of reaction chamber
• Y10S 438/906 Cleaning of wafer as interim step
• Y10S 438/907 Continuous processing
• Y10S 438/909 Controlled atmosphere
• Y10S 438/91 Controlling charging state at semiconductor-insulator interface
• Y10S 438/911 Differential oxidation and etching
• Y10S 438/912 Displacing pn junction
• Y10S 438/913 Diverse treatments performed in unitary chamber
• Y10S 438/914 Doping
• Y10S 438/926 Dummy metallization
• Y10S 438/927 Electromigration resistant metallization
• Y10S 438/928 Front and rear surface processing
• Y10S 438/929 Eutectic semiconductor
• Y10S 438/93 Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
• Y10S 438/931 Silicon carbide semiconductor
• Show 42 more