CPC Subgroup Additional Only
Y10S 438/914 Doping
Full Title
Semiconductor device manufacturing: process > Doping
11 direct subcodes
Child Classifications
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- Y10S 438/915 Amphoteric doping
- Y10S 438/916 Autodoping control or utilization
- Y10S 438/917 Deep level dopants, e.g. gold, chromium, iron or nickel
- Y10S 438/918 Special or nonstandard dopant
- Y10S 438/919 Compensation doping
- Y10S 438/92 Controlling diffusion profile by oxidation
- Y10S 438/921 Nonselective diffusion
- Y10S 438/922 Diffusion along grain boundaries
- Y10S 438/923 Diffusion through a layer
- Y10S 438/924 To facilitate selective etching
- Y10S 438/925 Fluid growth doping control, e.g. delta doping
Top Applicants
Top 10 applicants by patent filingsfor class Y10, 2013–2023, worldwide · Source: EPO PATSTAT
- BOEING COMPANY US 2,373
- FORD GLOBAL TECHNOLOGIES US 2,244
- HYUNDAI MOTOR COMPANY KR 2,186
- TOYOTA MOTOR CORPORATION JP 1,997
- 3M INNOVATIVE PROPERTIES COMPANY (MINNESOTA MINING AND MANUFACTURING INNOVATIVE PROPERTIES COMPANY) US 1,837
- GE (GENERAL ELECTRIC COMPANY) US 1,794
- SAMSUNG ELECTRONICS COMPANY KR 1,705
- CORNING US 1,569
- TOYOTA MOTOR CORPORATION 1,403
- LG CHEM KR 1,364